+86-1371375372/83782003
取消

MT46V64M8BN-6:F

  • MT46V64M8BN-6:F
  • MT46V64M8BN-6:F
MT46V64M8BN-6:F
Memory
Micron Technology Inc.
IC DRAM 512MBIT
-
托盘
120
-
TYPEDESCRIPTION
MfrMicron Technology Inc.
Series-
PackageTray
Part StatusObsolete
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - DDR
Memory Size512Mb (64M x 8)
Memory InterfaceParallel
Clock Frequency167 MHz
Write Cycle Time - Word, Page15ns
Access Time700 ps
Voltage - Supply2.3V ~ 2.7V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case60-TFBGA
Supplier Device Package60-FBGA (10x12.5)
Base Product NumberMT46V64M8

Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 54VFBGA
Micron Technology Inc.
IC DRAM 128MBIT PARALLEL 66TSOP
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
Microchip Technology
IC EEPROM 1KBIT SPI 2MHZ 8SOIC
Renesas Electronics America Inc
IC SRAM 16MBIT PAR 52TSOP II
Microchip Technology
IC EEPROM 256KBIT SPI 8SOIC
Microchip Technology
IC EEPROM 2KBIT I2C 8TSSOP
Sharp Microelectronics
IC FLASH 16MBIT PARALLEL 56TSOP
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
Sharp Microelectronics
IC FLASH 32MBIT PARALLEL 48TSOP
Taiyo Yuden
FIXED IND 3.3UH 1.7A 156MOHM SMD
Taiyo Yuden
FIXED IND 1UH 3.2A 32.4 MOHM SMD
Taiyo Yuden
FIXED IND 6.8UH 1.45A 117.6 MOHM
Switchcraft Inc.
DI STIX (A/V)
Knowles
CABLE PROGRAMMING 4POS
TDK Corporation
FIXED IND 0.8NH 320MA 400MOHM SM
Bourns Inc.
FIXED IND 5.6UH 300MA 1.1OHM SMD
Shenzhen Sunlord Electronics Co., Ltd.
FIXED IND 82UH 260MA 2.782OHM SM
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP
关闭
Inquiry
captcha

+86-1371375372/83782003

icb@ystjt.com
0